APQ110SN5EA MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APQ110SN5EA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ110SN5EA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56.3 nS

Cossⓘ - Capacitancia de salida: 1006 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO-220

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APQ110SN5EA datasheet

..1. Size:92K alpha pacific
apq110sn5ea.pdf pdf_icon

DEVICE SPECIFICATION apQ110SN5EA 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

0.1. Size:187K alpha pacific
apq110sn5eah.pdf pdf_icon

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

0.2. Size:338K alpha pacific
apq110sn5ead.pdf pdf_icon

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s

9.1. Size:379K alpha pacific
apq11bsn40a.pdf pdf_icon

DEVICE SPECIFICATION apQ11BSN40A 400V/11.2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

Otros transistores... APQ10SN40A, APQ10SN40AF, APQ10SN40AH, APQ10SN60A, APQ10SN60AF, APQ10SN60AH, APQ10SN65AF, APQ10SN65AH, IRF730, APQ110SN5EAD, APQ110SN5EAH, APQ11BSN40A, APQ12SN60A, APQ12SN60AF, APQ12SN60AH, APQ12SN65AF, APQ12SN65AH

APQ110SN5EA Todos los transistores