APQ110SN5EA Todos los transistores

 

APQ110SN5EA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ110SN5EA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 56.3 nS
   Cossⓘ - Capacitancia de salida: 1006 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

APQ110SN5EA Datasheet (PDF)

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 apq110sn5ea.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION apQ110SN5EA55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

 0.1. Size:187K  alpha pacific
 apq110sn5eah.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

 0.2. Size:338K  alpha pacific
 apq110sn5ead.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ)VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s

 9.1. Size:379K  alpha pacific
 apq11bsn40a.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION apQ11BSN40A400V/11.2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LNH4N60 | 2SK1542

 

 
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