APQ110SN5EA datasheet, аналоги, основные параметры

Наименование производителя: APQ110SN5EA  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 200 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 55 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 56.3 ns

Cossⓘ - Выходная емкость: 1006 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: TO-220

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Аналог (замена) для APQ110SN5EA

- подборⓘ MOSFET транзистора по параметрам

 

APQ110SN5EA даташит

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 apq110sn5ea.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION apQ110SN5EA 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

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 apq110sn5eah.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

 0.2. Size:338K  alpha pacific
 apq110sn5ead.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m (typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s

 9.1. Size:379K  alpha pacific
 apq11bsn40a.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION apQ11BSN40A 400V/11.2A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3 (typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

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Другие IGBT... APQ10SN40A, APQ10SN40AF, APQ10SN40AH, APQ10SN60A, APQ10SN60AF, APQ10SN60AH, APQ10SN65AF, APQ10SN65AH, AOD4184A, APQ110SN5EAD, APQ110SN5EAH, APQ11BSN40A, APQ12SN60A, APQ12SN60AF, APQ12SN60AH, APQ12SN65AF, APQ12SN65AH