Справочник MOSFET. APQ110SN5EA

 

APQ110SN5EA Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APQ110SN5EA
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 55 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 79.2 nC
   tr ⓘ - Время нарастания: 56.3 ns
   Cossⓘ - Выходная емкость: 1006 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для APQ110SN5EA

   - подбор ⓘ MOSFET транзистора по параметрам

 

APQ110SN5EA Datasheet (PDF)

 ..1. Size:92K  alpha pacific
 apq110sn5ea.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION apQ110SN5EA55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta

 0.1. Size:187K  alpha pacific
 apq110sn5eah.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

 0.2. Size:338K  alpha pacific
 apq110sn5ead.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ)VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s

 9.1. Size:379K  alpha pacific
 apq11bsn40a.pdf pdf_icon

APQ110SN5EA

DEVICE SPECIFICATION apQ11BSN40A400V/11.2A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 400V / 11.2A RDS(on) = 0.3(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =6.72A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mi

ПОКАЗАТЬ ЕЩЁ

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History: BRD630 | IXFN260N17T

 

 
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