APQ110SN5EA MOSFET. Datasheet pdf. Equivalent
Type Designator: APQ110SN5EA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 110 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 56.3 nS
Drain-Source Capacitance (Cd): 1006 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: TO-220
APQ110SN5EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APQ110SN5EA Datasheet (PDF)
0.1. apq110sn5ead.pdf 
Size:338K _alpha_pacific
DEVICE SPECIFICATION APQ110SN5EAD 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ)VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-s
0.2. apq110sn5ea.pdf Size:92K _alpha_pacific
DEVICE SPECIFICATION apQ110SN5EA55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, RDS(on) =6m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-sta
0.3. apq110sn5eah.pdf Size:187K _alpha_pacific
DEVICE SPECIFICATION APQ110SN5EAH 55V/110A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 55V / 110A, effect transistors are produced using planar stripe, RDS(on) =6m(typ) VGS =10V, ID =66A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on
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