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APQ12SN65AH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ12SN65AH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 216 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46.2 nC
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 189 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.83 Ohm
   Paquete / Cubierta: TO-220

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APQ12SN65AH Datasheet (PDF)

 ..1. Size:706K  alpha pacific
apq12sn65af apq12sn65ah.pdf

APQ12SN65AH
APQ12SN65AH

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6(typ)VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor

 6.1. Size:754K  alpha pacific
apq12sn60ah.pdf

APQ12SN65AH
APQ12SN65AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 6.2. Size:754K  alpha pacific
apq12sn60af.pdf

APQ12SN65AH
APQ12SN65AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 6.3. Size:458K  alpha pacific
apq12sn60a.pdf

APQ12SN65AH
APQ12SN65AH

DEVICE SPECIFICATION apQ12SN60A(F)600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini

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