All MOSFET. APQ12SN65AH Datasheet

 

APQ12SN65AH Datasheet and Replacement


   Type Designator: APQ12SN65AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 216 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
   Package: TO-220
 

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APQ12SN65AH Datasheet (PDF)

 ..1. Size:706K  alpha pacific
 apq12sn65af apq12sn65ah.pdf pdf_icon

APQ12SN65AH

DEVICE SPECIFICATION APQ12SN65AH APQ12SN65AF 650V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 650V / 12A field effect transistors are produced using planar RDS(on) = 0.6(typ)VGS = 10 V ,ID =6A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailor

 6.1. Size:754K  alpha pacific
 apq12sn60ah.pdf pdf_icon

APQ12SN65AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 6.2. Size:754K  alpha pacific
 apq12sn60af.pdf pdf_icon

APQ12SN65AH

DEVICE SPECIFICATION APQ12SN60AH APQ12SN60AF 600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A field effect transistors are produced using planar RDS(on) = 0.52(typ)VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tai

 6.3. Size:458K  alpha pacific
 apq12sn60a.pdf pdf_icon

APQ12SN65AH

DEVICE SPECIFICATION apQ12SN60A(F)600V/12A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power 600V / 12A RDS(on) = 0.52(typ) @ field effect transistors are produced using planar VGS = 10 V ,ID =7.2A stripe, DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to mini

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Datasheet: APQ110SN5EA , APQ110SN5EAD , APQ110SN5EAH , APQ11BSN40A , APQ12SN60A , APQ12SN60AF , APQ12SN60AH , APQ12SN65AF , 50N06 , APQ13SN50A , APQ13SN50AF , APQ13SN50AH , APQ14SN65AF , APQ14SN65AH , APQ16SN06AA , APQ16SN06AB , APQ1HSN60AA .

History: IRF634 | IRF8707GPBF | MPVA4N70F | FMV06N90E

Keywords - APQ12SN65AH MOSFET datasheet

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