APQ4ESN65AF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ4ESN65AF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO-220F

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APQ4ESN65AF datasheet

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APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN65AH APQ4ESN65AF 650V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 4.5A effect transistors are produced using planar stripe, RDS(on) =2.4 (typ) VGS =10V, ID =2.25A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

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APQ4ESN65AF

DEVICE SPECIFICATION apQ4ESN50A(F) 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

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 apq4esn50ab.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

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 apq4esn50ae.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

MOSTRAR MÁS

Otros transistores... APQ25SN06AB, APQ39SN04AA, APQ39SN04AB, APQ4ESN50A, APQ4ESN50AB, APQ4ESN50AE, APQ4ESN50AF, APQ4ESN50AH, IRFP250N, APQ4ESN65AH, APQ50SN06A, APQ50SN06AD, APQ50SN06AH, APQ57SN10B, APQ57SN10BH, APQ5ESN40A, APQ5ESN40AF