APQ4ESN65AF Specs and Replacement

Type Designator: APQ4ESN65AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO-220F

APQ4ESN65AF substitution

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APQ4ESN65AF datasheet

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 apq4esn65af apq4esn65ah.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN65AH APQ4ESN65AF 650V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 4.5A effect transistors are produced using planar stripe, RDS(on) =2.4 (typ) VGS =10V, ID =2.25A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore... See More ⇒

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 apq4esn50a.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION apQ4ESN50A(F) 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize... See More ⇒

 7.2. Size:643K  alpha pacific
 apq4esn50ab.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o... See More ⇒

 7.3. Size:662K  alpha pacific
 apq4esn50ae.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on... See More ⇒

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Detailed specifications: APQ25SN06AB, APQ39SN04AA, APQ39SN04AB, APQ4ESN50A, APQ4ESN50AB, APQ4ESN50AE, APQ4ESN50AF, APQ4ESN50AH, IRFP250N, APQ4ESN65AH, APQ50SN06A, APQ50SN06AD, APQ50SN06AH, APQ57SN10B, APQ57SN10BH, APQ5ESN40A, APQ5ESN40AF

Keywords - APQ4ESN65AF MOSFET specs

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