All MOSFET. APQ4ESN65AF Datasheet

 

APQ4ESN65AF Datasheet and Replacement


   Type Designator: APQ4ESN65AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO-220F
 

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APQ4ESN65AF Datasheet (PDF)

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APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN65AH APQ4ESN65AF 650V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 650V / 4.5A effect transistors are produced using planar stripe, RDS(on) =2.4(typ)VGS =10V, ID =2.25A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

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APQ4ESN65AF

DEVICE SPECIFICATION apQ4ESN50A(F)500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

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 apq4esn50ab.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

 7.3. Size:662K  alpha pacific
 apq4esn50ae.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2(typ)VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

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Datasheet: APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , IRFP250N , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF .

History: PHD97NQ03LT

Keywords - APQ4ESN65AF MOSFET datasheet

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