APQ4ESN65AF - описание и поиск аналогов

 

APQ4ESN65AF. Аналоги и основные параметры

Наименование производителя: APQ4ESN65AF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 42 ns

Cossⓘ - Выходная емкость: 50 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm

Тип корпуса: TO-220F

Аналог (замена) для APQ4ESN65AF

- подборⓘ MOSFET транзистора по параметрам

 

APQ4ESN65AF даташит

 ..1. Size:649K  alpha pacific
 apq4esn65af apq4esn65ah.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN65AH APQ4ESN65AF 650V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 650V / 4.5A effect transistors are produced using planar stripe, RDS(on) =2.4 (typ) VGS =10V, ID =2.25A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailore

 7.1. Size:504K  alpha pacific
 apq4esn50a.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION apQ4ESN50A(F) 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A, RDS(on) =1.2 (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize

 7.2. Size:643K  alpha pacific
 apq4esn50ab.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AB 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize o

 7.3. Size:662K  alpha pacific
 apq4esn50ae.pdf pdf_icon

APQ4ESN65AF

DEVICE SPECIFICATION APQ4ESN50AE 500V/4.5A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 500V / 4.5A effect transistors are produced using planar stripe, RDS(on) =1.2 (typ) VGS =10V, ID =2.7A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APQ25SN06AB , APQ39SN04AA , APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , IRFP250N , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF .

 

 

 

 

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