APQ50SN06A Todos los transistores

 

APQ50SN06A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APQ50SN06A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35.2 nS
   Cossⓘ - Capacitancia de salida: 320.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO-220
 

 Búsqueda de reemplazo de APQ50SN06A MOSFET

   - Selección ⓘ de transistores por parámetros

 

APQ50SN06A Datasheet (PDF)

 ..1. Size:92K  alpha pacific
apq50sn06a.pdf pdf_icon

APQ50SN06A

DEVICE SPECIFICATION apQ50SN06A60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

 0.1. Size:558K  alpha pacific
apq50sn06ah.pdf pdf_icon

APQ50SN06A

DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

 0.2. Size:337K  alpha pacific
apq50sn06ad.pdf pdf_icon

APQ50SN06A

DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Otros transistores... APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , K3569 , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A .

History: AO4294 | IPB031NE7N3G | 2SK1608 | SM1A18NSQG | NCE8205I | FHF10N65A

 

 
Back to Top

 


 
.