APQ50SN06A - аналоги, параметры транзистора - Справочник транзисторов

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DEVICE SPECIFICATION apQ50SN06A 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

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DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Другие MOSFET... APQ39SN04AB , APQ4ESN50A , APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , IRF9540 , APQ50SN06AD , APQ50SN06AH , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A .