APQ50SN06A Datasheet and Replacement. Cross Reference Search

APQ50SN06A Datasheet (PDF)

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DEVICE SPECIFICATION apQ50SN06A60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

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DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .