APQ50SN06A Specs and Replacement
Type Designator: APQ50SN06A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35.2 nS
Cossⓘ - Output Capacitance: 320.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO-220
APQ50SN06A substitution
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APQ50SN06A datasheet
apq50sn06a.pdf
DEVICE SPECIFICATION apQ50SN06A 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state... See More ⇒
apq50sn06ah.pdf
DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st... See More ⇒
apq50sn06ad.pdf
DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat... See More ⇒
Detailed specifications: APQ39SN04AB, APQ4ESN50A, APQ4ESN50AB, APQ4ESN50AE, APQ4ESN50AF, APQ4ESN50AH, APQ4ESN65AF, APQ4ESN65AH, IRF9540, APQ50SN06AD, APQ50SN06AH, APQ57SN10B, APQ57SN10BH, APQ5ESN40A, APQ5ESN40AF, APQ5ESN40AH, APQ65SN06A
Keywords - APQ50SN06A MOSFET specs
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