APQ50SN06AH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APQ50SN06AH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35.2 nS

Cossⓘ - Capacitancia de salida: 320.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO-220

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APQ50SN06AH datasheet

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APQ50SN06AH

DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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APQ50SN06AH

DEVICE SPECIFICATION apQ50SN06A 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m (typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

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APQ50SN06AH

DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET 1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m (typ) VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

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