APQ50SN06AH Datasheet and Replacement
Type Designator: APQ50SN06AH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35.2 nS
Cossⓘ - Output Capacitance: 320.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TO-220
APQ50SN06AH substitution
APQ50SN06AH Datasheet (PDF)
apq50sn06ah.pdf

DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st
apq50sn06a.pdf

DEVICE SPECIFICATION apQ50SN06A60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state
apq50sn06ad.pdf

DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat
Datasheet: APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , IRFP260 , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH .
History: PE532DY | OSG60R1K8PF
Keywords - APQ50SN06AH MOSFET datasheet
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History: PE532DY | OSG60R1K8PF



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