All MOSFET. APQ50SN06AH Datasheet

 

APQ50SN06AH Datasheet and Replacement


   Type Designator: APQ50SN06AH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35.2 nS
   Cossⓘ - Output Capacitance: 320.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220
 

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APQ50SN06AH Datasheet (PDF)

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APQ50SN06AH

DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st

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APQ50SN06AH

DEVICE SPECIFICATION apQ50SN06A60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state

 4.2. Size:337K  alpha pacific
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APQ50SN06AH

DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat

Datasheet: APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , IRFP260 , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH .

History: PE532DY | OSG60R1K8PF

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