APQ50SN06AH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APQ50SN06AH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35.2 ns
Cossⓘ - Выходная емкость: 320.7 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: TO-220
Аналог (замена) для APQ50SN06AH
APQ50SN06AH Datasheet (PDF)
apq50sn06ah.pdf

DEVICE SPECIFICATION APQ50SN06AH 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-st
apq50sn06a.pdf

DEVICE SPECIFICATION apQ50SN06A60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A, RDS(on) =19m(typ) @ effect transistors are produced using planar stripe, VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-state
apq50sn06ad.pdf

DEVICE SPECIFICATION APQ50SN06AD 60V/50A N-Channel MOSFET1 Description 2 Features These N-Channel enhancement mode power field 60V / 50A effect transistors are produced using planar stripe, RDS(on) =19m(typ)VGS =10V, ID =30A DMOS technology. Fast switching This advanced technology has been especially 100% avalanche tested tailored to minimize on-stat
Другие MOSFET... APQ4ESN50AB , APQ4ESN50AE , APQ4ESN50AF , APQ4ESN50AH , APQ4ESN65AF , APQ4ESN65AH , APQ50SN06A , APQ50SN06AD , IRFP260 , APQ57SN10B , APQ57SN10BH , APQ5ESN40A , APQ5ESN40AF , APQ5ESN40AH , APQ65SN06A , APQ65SN06AD , APQ65SN06AH .
History: NVD5805N | DMN95H8D5HCTI | NTB52N10G
History: NVD5805N | DMN95H8D5HCTI | NTB52N10G



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