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CEDM7001 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CEDM7001
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 9.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: SOT-883L
 

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CEDM7001 Datasheet (PDF)

 ..1. Size:358K  central
 cedm7001.pdf pdf_icon

CEDM7001

CEDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: HFEATURES:

 0.1. Size:219K  central
 cedm7001e.pdf pdf_icon

CEDM7001

TMCEDM7001ECentralSemiconductor Corp.SURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001E is anSILICON MOSFETEnhancement-mode N-Channel Field Effect Transistor,manufactured by the N-Channel DMOS Process, designed forhigh speed pulsed amplifier and driver applications.This MOSFET offers Low rDS(on) and Low Theshold Voltage.FEATURES:

 0.2. Size:972K  central
 cedm7001vl.pdf pdf_icon

CEDM7001

CEDM7001VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001VL is anMOSFETN-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET of

 7.1. Size:1044K  central
 cedm7004vl.pdf pdf_icon

CEDM7001

CEDM7004VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7004VL is anMOSFETN-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: SCOMPLEMENTARY P-CHA

MOSTRAR MÁS

Otros transistores... APQ9ESN20AB , CEB05N8 , CEB110P03 , CEB18N5 , CEB30N3 , CED05N8 , CED5175 , CED6042 , IRF530 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , CEDM8001VL , CEDM8004 .

History: NCE60N390D

 

 
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