CEDM7001 - Даташиты. Аналоги. Основные параметры
Наименование производителя: CEDM7001
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 9.5 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: SOT-883L
Аналог (замена) для CEDM7001
CEDM7001 Datasheet (PDF)
cedm7001.pdf

CEDM7001SURFACE MOUNTwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001 is SILICON MOSFETan N-Channel Enhancement-mode Silicon MOSFET, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(ON) and Low Theshold Voltage.MARKING CODE: HFEATURES:
cedm7001e.pdf

TMCEDM7001ECentralSemiconductor Corp.SURFACE MOUNTN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001E is anSILICON MOSFETEnhancement-mode N-Channel Field Effect Transistor,manufactured by the N-Channel DMOS Process, designed forhigh speed pulsed amplifier and driver applications.This MOSFET offers Low rDS(on) and Low Theshold Voltage.FEATURES:
cedm7001vl.pdf

CEDM7001VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7001VL is anMOSFETN-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET of
cedm7004vl.pdf

CEDM7004VLSURFACE MOUNT SILICONwww.centralsemi.comN-CHANNELDESCRIPTION:ENHANCEMENT-MODEThe CENTRAL SEMICONDUCTOR CEDM7004VL is anMOSFETN-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage.MARKING CODE: SCOMPLEMENTARY P-CHA
Другие MOSFET... APQ9ESN20AB , CEB05N8 , CEB110P03 , CEB18N5 , CEB30N3 , CED05N8 , CED5175 , CED6042 , AO4407 , CEDM7001E , CEDM7001VL , CEDM7002AE , CEDM7004 , CEDM7004VL , CEDM8001 , CEDM8001VL , CEDM8004 .
History: STL24NM60N | LNG2N65 | AP55T10GH | STP45NE06 | FQD50P06 | SM6536D1RL
History: STL24NM60N | LNG2N65 | AP55T10GH | STP45NE06 | FQD50P06 | SM6536D1RL



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
irf540 datasheet | irf530 | 2n3565 | irf530n | pn2222a datasheet | tip41c transistor | 2n5087 | ksa1381