CEDM7001 Specs and Replacement
Type Designator: CEDM7001
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 9.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT-883L
CEDM7001 substitution
- MOSFET ⓘ Cross-Reference Search
CEDM7001 datasheet
cedm7001vl.pdf
CEDM7001VL SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM7001VL is an MOSFET N-Channel Enhancement-mode MOSFET packaged in the very low profile SOT-883VL case. The device is designed for space constrained high speed amplifier and driver applications where package height is a critical design element. This MOSFET of... See More ⇒
cedm7004vl.pdf
CEDM7004VL SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CEDM7004VL is an MOSFET N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE S COMPLEMENTARY P-CHA... See More ⇒
Detailed specifications: APQ9ESN20AB, CEB05N8, CEB110P03, CEB18N5, CEB30N3, CED05N8, CED5175, CED6042, IRF530, CEDM7001E, CEDM7001VL, CEDM7002AE, CEDM7004, CEDM7004VL, CEDM8001, CEDM8001VL, CEDM8004
Keywords - CEDM7001 MOSFET specs
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