RU190N10Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RU190N10Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 312 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 190 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 155 nC
   Tiempo de subida (tr): 42 nS
   Conductancia de drenaje-sustrato (Cd): 1000 pF
   Resistencia entre drenaje y fuente RDS(on): 0.008 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET RU190N10Q

RU190N10Q Datasheet (PDF)

..1. Size:281K ruichips
ru190n10q.pdf

RU190N10QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-247Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

6.1. Size:293K ruichips
ru190n10r.pdf

RU190N10RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

6.2. Size:284K ruichips
ru190n10s.pdf

RU190N10SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-263Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

8.1. Size:399K ruichips
ru190n08.pdf

RU190N08N-Channel Advanced Power MOSFETFeatures Pin Description 80V/190ARDS (ON)=3.9m (Typ.) @ VGS=10VAvalanche RatedTO-220 TO-220F Reliable and Rugged Lead Free and Green Devices AvailableTO-263 TO-247ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Max

8.2. Size:324K ruichips
ru190n08q.pdf

RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

8.3. Size:330K ruichips
ru190n08r.pdf

RU190N08R N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

8.4. Size:322K ruichips
ru190n08s.pdf

RU190N08S N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-263 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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