RU190N10Q
MOSFET. Datasheet pdf. Equivalent
Type Designator: RU190N10Q
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 312
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 190
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 155
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 1000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO-247
RU190N10Q
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU190N10Q
Datasheet (PDF)
..1. Size:281K ruichips
ru190n10q.pdf
RU190N10QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-247Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe
6.1. Size:293K ruichips
ru190n10r.pdf
RU190N10RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe
6.2. Size:284K ruichips
ru190n10s.pdf
RU190N10SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-263Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe
8.1. Size:399K ruichips
ru190n08.pdf
RU190N08N-Channel Advanced Power MOSFETFeatures Pin Description 80V/190ARDS (ON)=3.9m (Typ.) @ VGS=10VAvalanche RatedTO-220 TO-220F Reliable and Rugged Lead Free and Green Devices AvailableTO-263 TO-247ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Max
8.2. Size:324K ruichips
ru190n08q.pdf
RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A
8.3. Size:330K ruichips
ru190n08r.pdf
RU190N08R N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A
8.4. Size:322K ruichips
ru190n08s.pdf
RU190N08S N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-263 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A
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