All MOSFET. RU190N10Q Datasheet

 

RU190N10Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU190N10Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 155 nC
   trⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 1000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-247

 RU190N10Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU190N10Q Datasheet (PDF)

 ..1. Size:281K  ruichips
 ru190n10q.pdf

RU190N10Q RU190N10Q

RU190N10QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-247Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

 6.1. Size:293K  ruichips
 ru190n10r.pdf

RU190N10Q RU190N10Q

RU190N10RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

 6.2. Size:284K  ruichips
 ru190n10s.pdf

RU190N10Q RU190N10Q

RU190N10SN-Channel Advanced Power MOSFETFeatures Pin Description 100V/190ARDS (ON)=6.5m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableApplicationsTO-263Automotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Maximum Ratings N-Channe

 8.1. Size:399K  ruichips
 ru190n08.pdf

RU190N10Q RU190N10Q

RU190N08N-Channel Advanced Power MOSFETFeatures Pin Description 80V/190ARDS (ON)=3.9m (Typ.) @ VGS=10VAvalanche RatedTO-220 TO-220F Reliable and Rugged Lead Free and Green Devices AvailableTO-263 TO-247ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingAbsolute Max

 8.2. Size:324K  ruichips
 ru190n08q.pdf

RU190N10Q RU190N10Q

RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

 8.3. Size:330K  ruichips
 ru190n08r.pdf

RU190N10Q RU190N10Q

RU190N08R N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

 8.4. Size:322K  ruichips
 ru190n08s.pdf

RU190N10Q RU190N10Q

RU190N08S N-Channel Advanced Power MOSFET Features Pin Description 80V/190A RDS (ON)=3.9m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-263 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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