RU1C001UN Todos los transistores

 

RU1C001UN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1C001UN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 3.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.5 Ohm
   Paquete / Cubierta: UMT3F
 

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RU1C001UN Datasheet (PDF)

 ..1. Size:2193K  rohm
ru1c001un.pdf pdf_icon

RU1C001UN

RU1C001UNDatasheetNch 20V 100mA Small Signal MOSFETlOutlinel SOT-323FLVDSS20V SC-85RDS(on)(Max.)3.5 UMT3FID100mAPD150mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPackagi

 ..2. Size:586K  ruichips
ru1c001un.pdf pdf_icon

RU1C001UN

RU1C001UN Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VUMT3F(3) RDS(on) (Max.)3.5WID100mA(1) PD150mW(2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

 7.1. Size:1322K  rohm
ru1c001zp.pdf pdf_icon

RU1C001UN

RU1C001ZPDatasheetPch -20V -100mA Small Signal MOSFETlOutlinel SOT-323FLVDSS-20V SC-85RDS(on)(Max.)3.8 UMT3FID100mAPD200mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPack

 7.2. Size:404K  ruichips
ru1c001zp.pdf pdf_icon

RU1C001UN

RU1C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20VUMT3F(3) RDS(on) (Max.)3.8WID-100mA(1) PD150mW (2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIOD

Otros transistores... RU1088R , RU120N15Q , RU120N15R , RU140N10R , RU16P8M4 , RU190N10Q , RU190N10R , RU190N10S , IRFB4110 , RU1C001ZP , RU1H100R , RU1H130Q , RU1H130R , RU1H130S , RU1H190R , RU1H190S , RU1H300Q .

History: SI9926CDY | UTT25N08 | 2SK2572

 

 
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