All MOSFET. RU1C001UN Datasheet

 

RU1C001UN MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU1C001UN
   Marking Code: RW
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 3.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: UMT3F

 RU1C001UN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU1C001UN Datasheet (PDF)

 ..1. Size:2193K  rohm
 ru1c001un.pdf

RU1C001UN RU1C001UN

RU1C001UNDatasheetNch 20V 100mA Small Signal MOSFETlOutlinel SOT-323FLVDSS20V SC-85RDS(on)(Max.)3.5 UMT3FID100mAPD150mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPackagi

 ..2. Size:586K  ruichips
 ru1c001un.pdf

RU1C001UN RU1C001UN

RU1C001UN Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VUMT3F(3) RDS(on) (Max.)3.5WID100mA(1) PD150mW(2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE

 7.1. Size:1322K  rohm
 ru1c001zp.pdf

RU1C001UN RU1C001UN

RU1C001ZPDatasheetPch -20V -100mA Small Signal MOSFETlOutlinel SOT-323FLVDSS-20V SC-85RDS(on)(Max.)3.8 UMT3FID100mAPD200mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPack

 7.2. Size:404K  ruichips
 ru1c001zp.pdf

RU1C001UN RU1C001UN

RU1C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20VUMT3F(3) RDS(on) (Max.)3.8WID-100mA(1) PD150mW (2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIOD

 8.1. Size:968K  rohm
 ru1c002zp.pdf

RU1C001UN RU1C001UN

Data Sheet1.2V Drive Pch MOSFET RU1C002ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFET UMT3F2.00.90.32(3)Features1) Low on-resistance.2) Low voltage drive(1.2V drive).(1) (2)0.65 0.65 0.131.3Abbreviated symbol : YK ApplicationSwitching Packaging specifications Inner circuitPackage Taping (3)TypeCode TCLBasic ordering un

 8.2. Size:957K  rohm
 ru1c002un.pdf

RU1C001UN RU1C001UN

Data Sheet1.2V Drive Nch MOSFET RU1C002UN Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3F2.00.90.32(3)Features1) Low on-resistance.2) Low voltage drive(1.2V drive).(1) (2)0.65 0.65 0.131.3Abbreviated symbol : QR ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic ordering u

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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