RU1H35S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1H35S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 111 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO-263

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RU1H35S datasheet

 ..1. Size:290K  ruichips
 ru1h35s.pdf pdf_icon

RU1H35S

RU1H35S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-263 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles

 8.1. Size:287K  ruichips
 ru1h35q.pdf pdf_icon

RU1H35S

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-247 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles

 8.2. Size:298K  ruichips
 ru1h35r.pdf pdf_icon

RU1H35S

RU1H35R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-220 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles

 8.3. Size:282K  ruichips
 ru1h35k.pdf pdf_icon

RU1H35S

RU1H35K N-Channel Advanced Power MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO251 D Applications High Speed Power Switching G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (

MOSTRAR MÁS

Otros transistores... RU1H130S, RU1H190R, RU1H190S, RU1H300Q, RU1H35K, RU1H35L, RU1H35Q, RU1H35R, IRF9540N, RU1H36L, RU1H36R, RU1H36S, RU1H40L, RU1H60R, RU1H7H, RU1H80R, RU1HC2H