All MOSFET. RU1H35S Datasheet

 

RU1H35S MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU1H35S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 111 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 44 nC
   trⓘ - Rise Time: 76 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO-263

 RU1H35S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU1H35S Datasheet (PDF)

 ..1. Size:290K  ruichips
 ru1h35s.pdf

RU1H35S RU1H35S

RU1H35SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-263ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 8.1. Size:287K  ruichips
 ru1h35q.pdf

RU1H35S RU1H35S

RU1H35QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-247ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 8.2. Size:298K  ruichips
 ru1h35r.pdf

RU1H35S RU1H35S

RU1H35RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-220ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 8.3. Size:282K  ruichips
 ru1h35k.pdf

RU1H35S RU1H35S

RU1H35KN-Channel Advanced Power MOSFETFeatures Pin Description 100V/40A, RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DApplications High Speed Power SwitchingGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (

 8.4. Size:284K  ruichips
 ru1h35l.pdf

RU1H35S RU1H35S

RU1H35LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications High Speed Power SwitchingN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C

Datasheet: RU1H130S , RU1H190R , RU1H190S , RU1H300Q , RU1H35K , RU1H35L , RU1H35Q , RU1H35R , IRFP260 , RU1H36L , RU1H36R , RU1H36S , RU1H40L , RU1H60R , RU1H7H , RU1H80R , RU1HC2H .

History: SVF2N60RDTR

 

 
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