RU1H36R Todos los transistores

 

RU1H36R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1H36R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 79 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 32 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 28 nC
   Tiempo de subida (tr): 95 nS
   Conductancia de drenaje-sustrato (Cd): 230 pF
   Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
   Paquete / Cubierta: TO-220

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RU1H36R Datasheet (PDF)

 ..1. Size:291K  ruichips
ru1h36r.pdf

RU1H36R RU1H36R

RU1H36RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.1. Size:279K  ruichips
ru1h36l.pdf

RU1H36R RU1H36R

RU1H36LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.2. Size:282K  ruichips
ru1h36s.pdf

RU1H36R RU1H36R

RU1H36SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 9.1. Size:287K  ruichips
ru1h35q.pdf

RU1H36R RU1H36R

RU1H35QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-247ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.2. Size:298K  ruichips
ru1h35r.pdf

RU1H36R RU1H36R

RU1H35RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-220ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.3. Size:290K  ruichips
ru1h35s.pdf

RU1H36R RU1H36R

RU1H35SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-263ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.4. Size:292K  ruichips
ru1h300q.pdf

RU1H36R RU1H36R

RU1H300QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/300A, RDS (ON) =3m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficienc

 9.5. Size:282K  ruichips
ru1h35k.pdf

RU1H36R RU1H36R

RU1H35KN-Channel Advanced Power MOSFETFeatures Pin Description 100V/40A, RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DApplications High Speed Power SwitchingGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (

 9.6. Size:284K  ruichips
ru1h35l.pdf

RU1H36R RU1H36R

RU1H35LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications High Speed Power SwitchingN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C

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