All MOSFET. RU1H36R Datasheet

 

RU1H36R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU1H36R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-220

 RU1H36R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU1H36R Datasheet (PDF)

 ..1. Size:291K  ruichips
 ru1h36r.pdf

RU1H36R RU1H36R

RU1H36RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.1. Size:279K  ruichips
 ru1h36l.pdf

RU1H36R RU1H36R

RU1H36LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.2. Size:282K  ruichips
 ru1h36s.pdf

RU1H36R RU1H36R

RU1H36SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 9.1. Size:287K  ruichips
 ru1h35q.pdf

RU1H36R RU1H36R

RU1H35QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-247ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.2. Size:298K  ruichips
 ru1h35r.pdf

RU1H36R RU1H36R

RU1H35RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-220ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.3. Size:290K  ruichips
 ru1h35s.pdf

RU1H36R RU1H36R

RU1H35SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-263ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

 9.4. Size:292K  ruichips
 ru1h300q.pdf

RU1H36R RU1H36R

RU1H300QN-Channel Advanced Power MOSFETFeatures Pin Description 100V/300A, RDS (ON) =3m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GDSTO247DApplications High Efficienc

 9.5. Size:282K  ruichips
 ru1h35k.pdf

RU1H36R RU1H36R

RU1H35KN-Channel Advanced Power MOSFETFeatures Pin Description 100V/40A, RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GDSTO251DApplications High Speed Power SwitchingGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitCommon Ratings (

 9.6. Size:284K  ruichips
 ru1h35l.pdf

RU1H36R RU1H36R

RU1H35LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-252Applications High Speed Power SwitchingN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF7103PBF | 2N6903 | ZXMN6A25DN8 | IRFS840

 

 
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