RU1H36S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1H36S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO-263

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RU1H36S datasheet

 ..1. Size:282K  ruichips
 ru1h36s.pdf pdf_icon

RU1H36S

RU1H36S N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/32A, RDS (ON) =34m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available TO-263 (RoHS Compliant) Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol P

 8.1. Size:279K  ruichips
 ru1h36l.pdf pdf_icon

RU1H36S

RU1H36L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/32A, RDS (ON) =34m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol P

 8.2. Size:291K  ruichips
 ru1h36r.pdf pdf_icon

RU1H36S

RU1H36R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/32A, RDS (ON) =34m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol P

 9.1. Size:287K  ruichips
 ru1h35q.pdf pdf_icon

RU1H36S

RU1H35Q N-Channel Advanced Power MOSFET MOSFET Features Pin Description 100V/40A, RDS (ON) =21m (Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) TO-247 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25 C Unles

MOSTRAR MÁS

Otros transistores... RU1H300Q, RU1H35K, RU1H35L, RU1H35Q, RU1H35R, RU1H35S, RU1H36L, RU1H36R, AO3401, RU1H40L, RU1H60R, RU1H7H, RU1H80R, RU1HC2H, RU1HE12L, RU1HE16L, RU1HE3D