All MOSFET. RU1H36S Datasheet

 

RU1H36S Datasheet and Replacement


   Type Designator: RU1H36S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-263
 

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RU1H36S Datasheet (PDF)

 ..1. Size:282K  ruichips
 ru1h36s.pdf pdf_icon

RU1H36S

RU1H36SN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices AvailableTO-263(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.1. Size:279K  ruichips
 ru1h36l.pdf pdf_icon

RU1H36S

RU1H36LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 8.2. Size:291K  ruichips
 ru1h36r.pdf pdf_icon

RU1H36S

RU1H36RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/32A,RDS (ON) =34m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters Synchronous RectifierN-Channel MOSFETAbsolute Maximum RatingsSymbolP

 9.1. Size:287K  ruichips
 ru1h35q.pdf pdf_icon

RU1H36S

RU1H35QN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 100V/40A,RDS (ON) =21m(Typ.)@VGS=10V Super High Dense Cell Design 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)TO-247ApplicationsSwitching applicationN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unles

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Datasheet: RU1H300Q , RU1H35K , RU1H35L , RU1H35Q , RU1H35R , RU1H35S , RU1H36L , RU1H36R , AO3400 , RU1H40L , RU1H60R , RU1H7H , RU1H80R , RU1HC2H , RU1HE12L , RU1HE16L , RU1HE3D .

History: IPA60R600P6

Keywords - RU1H36S MOSFET datasheet

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