RU1HL8L Todos los transistores

 

RU1HL8L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RU1HL8L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

RU1HL8L Datasheet (PDF)

 ..1. Size:304K  ruichips
 ru1hl8l.pdf pdf_icon

RU1HL8L

RU1HL8LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-10A,RDS (ON) =120m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Chan

 9.1. Size:293K  ruichips
 ru1hl13l.pdf pdf_icon

RU1HL8L

RU1HL13LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 9.2. Size:296K  ruichips
 ru1hl13k.pdf pdf_icon

RU1HL8L

RU1HL13KP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO251 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 9.3. Size:301K  ruichips
 ru1hl13r.pdf pdf_icon

RU1HL8L

RU1HL13RP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO-220 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Ch

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H | CSD16410Q5A

 

 
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