RU1HL8L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1HL8L

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO-252

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RU1HL8L datasheet

 ..1. Size:304K  ruichips
 ru1hl8l.pdf pdf_icon

RU1HL8L

RU1HL8L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-10A, RDS (ON) =120m (Typ.)@VGS=-10V RDS (ON) =180m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Chan

 9.1. Size:293K  ruichips
 ru1hl13l.pdf pdf_icon

RU1HL8L

RU1HL13L P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (tpy.)@VGS=-10V RDS (ON) =180m (tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Cha

 9.2. Size:296K  ruichips
 ru1hl13k.pdf pdf_icon

RU1HL8L

RU1HL13K P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (Typ.)@VGS=-10V RDS (ON) =180m (Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO251 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Cha

 9.3. Size:301K  ruichips
 ru1hl13r.pdf pdf_icon

RU1HL8L

RU1HL13R P-Channel Advanced Power MOSFET MOSFET Features Pin Description -100V/-13A, RDS (ON) =160m (tpy.)@VGS=-10V RDS (ON) =180m (tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO-220 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management DC/DC Converters P-Ch

MOSTRAR MÁS

Otros transistores... RU1HE16L, RU1HE3D, RU1HE3H, RU1HE4D, RU1HE4H, RU1HL13K, RU1HL13L, RU1HL13R, CS150N03A8, RU1HP55R, RU1HP60R, RU1J002YN, RU1Z120R, RU1Z200Q, RU20120L, RU20130L, RU2013H