All MOSFET. RU1HL8L Datasheet

 

RU1HL8L MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU1HL8L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO-252

 RU1HL8L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU1HL8L Datasheet (PDF)

 ..1. Size:304K  ruichips
 ru1hl8l.pdf

RU1HL8L RU1HL8L

RU1HL8LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-10A,RDS (ON) =120m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Chan

 9.1. Size:293K  ruichips
 ru1hl13l.pdf

RU1HL8L RU1HL8L

RU1HL13LP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 9.2. Size:296K  ruichips
 ru1hl13k.pdf

RU1HL8L RU1HL8L

RU1HL13KP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(Typ.)@VGS=-10VRDS (ON) =180m(Typ.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO251 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Cha

 9.3. Size:301K  ruichips
 ru1hl13r.pdf

RU1HL8L RU1HL8L

RU1HL13RP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -100V/-13A,RDS (ON) =160m(tpy.)@VGS=-10VRDS (ON) =180m(tpy.)@VGS=-4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO-220 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management DC/DC ConvertersP-Ch

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SWT45N60K2

 

 
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