RU60E6H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU60E6H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: SOP-8

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RU60E6H datasheet

 ..1. Size:287K  ruichips
ru60e6h.pdf pdf_icon

RU60E6H

RU60E6H N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/6A, RDS (ON) =31m (Type) @ VGS=10V RDS (ON) =37m (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD Protected SOP-8 Lead Free and Green Available Applications Power Management. Switch Applications. N-Channel MOSFET Absolute Maximum Ratings Symbol Pa

 8.1. Size:250K  ruichips
ru60e6d.pdf pdf_icon

RU60E6H

RU60E6D N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/6A, RDS (ON) =32m (Typ.) @ VGS=10V RDS (ON) =40m (Typ.) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance Lead Free and Green Available Applications Power Management DC-DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter R

 9.1. Size:287K  ruichips
ru60e16l.pdf pdf_icon

RU60E6H

RU60E16L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/16A, RDS (ON) =60m (Typ.)@VGS=10V RDS (ON) =75m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and Rugged TO252 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management N-Channel MOSFET Absolute Maximum

 9.2. Size:301K  ruichips
ru60e16r.pdf pdf_icon

RU60E6H

RU60E16R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 60V/16A, RDS (ON) =60m (Typ.)@VGS=10V RDS (ON) =75m (Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parame

Otros transistores... RU60D5H, RU60E16L, RU60E16R, RU60E25L, RU60E25R, RU60E5D, RU60E5H, RU60E6D, IRLZ44N, RU60P60R, RU6199Q, RU6199R, RU65120R, RU6581L, RU6581R, RU6881R, RU6888M