RU60E6H MOSFET. Datasheet pdf. Equivalent
Type Designator: RU60E6H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: SOP-8
RU60E6H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU60E6H Datasheet (PDF)
ru60e6h.pdf
RU60E6HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/6A,RDS (ON) =31m (Type) @ VGS=10VRDS (ON) =37m (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management. Switch Applications.N-Channel MOSFETAbsolute Maximum RatingsSymbolPa
ru60e6d.pdf
RU60E6DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/6A,RDS (ON) =32m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance Lead Free and Green AvailableApplications Power Management DC-DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R
ru60e16l.pdf
RU60E16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/16A,RDS (ON) =60m(Typ.)@VGS=10VRDS (ON) =75m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum
ru60e16r.pdf
RU60E16RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/16A,RDS (ON) =60m(Typ.)@VGS=10VRDS (ON) =75m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolParame
ru60e5d.pdf
RU60E5D N-Channel Advanced Power MOSFET Features Pin Description 60V/5A, RDS (ON) =58m (Type) @ VGS=10V RDS (ON) =70m (Type) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Available Applications Power Management DC-DC Converter Motor Control N-Channel
ru60e25r.pdf
RU60E25RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/25A,RDS (ON) =35m(Typ.)@VGS=10V Super High Dense Cell Design ESD protected 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings
ru60e25l.pdf
RU60E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/25A,RDS (ON) =35m(Typ.)@VGS=10VRDS (ON) =42m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru60e5h.pdf
RU60E5HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/5A,RDS (ON) =60m (Typ.) @ VGS=10VRDS (ON) =70m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Switch ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolPara
ru60e25l.pdf
RU60E25Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
