All MOSFET. RU60E6H Datasheet

 

RU60E6H MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU60E6H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP-8

 RU60E6H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU60E6H Datasheet (PDF)

 ..1. Size:287K  ruichips
 ru60e6h.pdf

RU60E6H RU60E6H

RU60E6HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/6A,RDS (ON) =31m (Type) @ VGS=10VRDS (ON) =37m (Type) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management. Switch Applications.N-Channel MOSFETAbsolute Maximum RatingsSymbolPa

 8.1. Size:250K  ruichips
 ru60e6d.pdf

RU60E6H RU60E6H

RU60E6DN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/6A,RDS (ON) =32m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V ESD Protected Reliable and RuggedSOT-223 Ultra Low On-Resistance Lead Free and Green AvailableApplications Power Management DC-DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter R

 9.1. Size:287K  ruichips
 ru60e16l.pdf

RU60E6H RU60E6H

RU60E16LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/16A,RDS (ON) =60m(Typ.)@VGS=10VRDS (ON) =75m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 100% avalanche tested Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum

 9.2. Size:301K  ruichips
 ru60e16r.pdf

RU60E6H RU60E6H

RU60E16RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/16A,RDS (ON) =60m(Typ.)@VGS=10VRDS (ON) =75m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolParame

 9.3. Size:257K  ruichips
 ru60e5d.pdf

RU60E6H RU60E6H

RU60E5D N-Channel Advanced Power MOSFET Features Pin Description 60V/5A, RDS (ON) =58m (Type) @ VGS=10V RDS (ON) =70m (Type) @ VGS=4.5V ESD Protected Reliable and Rugged SOT-223 Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Available Applications Power Management DC-DC Converter Motor Control N-Channel

 9.4. Size:303K  ruichips
 ru60e25r.pdf

RU60E6H RU60E6H

RU60E25RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/25A,RDS (ON) =35m(Typ.)@VGS=10V Super High Dense Cell Design ESD protected 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power ManagementN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

 9.5. Size:284K  ruichips
 ru60e25l.pdf

RU60E6H RU60E6H

RU60E25LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/25A,RDS (ON) =35m(Typ.)@VGS=10VRDS (ON) =42m(Typ.)@VGS=4.5V Super High Dense Cell Design ESD protected Reliable and RuggedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management.N-Channel MOSFETAbsolute Maximum RatingsSymbolParamete

 9.6. Size:279K  ruichips
 ru60e5h.pdf

RU60E6H RU60E6H

RU60E5HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 60V/5A,RDS (ON) =60m (Typ.) @ VGS=10VRDS (ON) =70m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Power Management Switch ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolPara

 9.7. Size:804K  cn vbsemi
 ru60e25l.pdf

RU60E6H RU60E6H

RU60E25Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise note

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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