RU80N15Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU80N15Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 550 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: TO-247

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RU80N15Q datasheet

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RU80N15Q

RU80N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/80A RDS (ON)=31m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

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RU80N15Q

RU80N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/80A RDS (ON)=31m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum R

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 ru80n15s.pdf pdf_icon

RU80N15Q

RU80N15S N-Channel Advanced Power MOSFET Features Pin Description 150V/80A, RDS (ON) =31m (Typ.)@VGS=10V D Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available G S TO263 D Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS G High Speed Power Switching S N-Channel

 9.1. Size:266K  semihow
 hrd80n06k hru80n06k.pdf pdf_icon

RU80N15Q

Sep 2014 BVDSS = 60 V RDS(on) typ HRD80N06K / HRU80N06K ID = 114 A 60V N-Channel Trench MOSFET D-PAK I-PAK FEATURES 2 1 Originative New Design 1 3 2 3 Superior Avalanche Rugged Technology HRD80N06K HRU80N06K Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 6.

MOSTRAR MÁS

Otros transistores... RU7590R, RU7H2K, RU80100R, RU80100S, RU80190R, RU8080R, RU8080S, RU8099R, 10N65, RU80N15R, RU80N15S, RU80T4H, RU8205C6, RU8205G, RU8590R, RUE002N02TL, RUE003N02TL