All MOSFET. RU80N15Q Datasheet

 

RU80N15Q Datasheet and Replacement


   Type Designator: RU80N15Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-247
 

 RU80N15Q substitution

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RU80N15Q Datasheet (PDF)

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RU80N15Q

RU80N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/80A RDS (ON)=31m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Abs

 7.1. Size:292K  ruichips
ru80n15r.pdf pdf_icon

RU80N15Q

RU80N15RN-Channel Advanced Power MOSFETFeatures Pin Description 150V/80ARDS (ON)=31m (Typ.) @ VGS=10VAvalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableTO-220ApplicationsAutomotive applications and a widevariety of other applicationsHigh Efficiency Synchronous in SMPSHigh Speed Power SwitchingN-Channel MOSFETAbsolute Maximum R

 7.2. Size:317K  ruichips
ru80n15s.pdf pdf_icon

RU80N15Q

RU80N15SN-Channel Advanced Power MOSFETFeatures Pin Description 150V/80A, RDS (ON) =31m(Typ.)@VGS=10VD Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableGSTO263DApplications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPSG High Speed Power SwitchingSN-Channel

 9.1. Size:266K  semihow
hrd80n06k hru80n06k.pdf pdf_icon

RU80N15Q

Sep 2014BVDSS = 60 VRDS(on) typ HRD80N06K / HRU80N06K ID = 114 A60V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD80N06K HRU80N06K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.

Datasheet: RU7590R , RU7H2K , RU80100R , RU80100S , RU80190R , RU8080R , RU8080S , RU8099R , STP80NF70 , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , RU8590R , RUE002N02TL , RUE003N02TL .

History: FHF2N65D | IPI120N10S4-03

Keywords - RU80N15Q MOSFET datasheet

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