RUM002N05T2L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUM002N05T2L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: VMT3

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RUM002N05T2L datasheet

 ..1. Size:170K  ruichips
 rum002n05t2l.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 1 RUM002

 5.1. Size:172K  rohm
 rum002n05.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 1 RUM002

 6.1. Size:214K  rohm
 rum002n02.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

 6.2. Size:213K  ruichips
 rum002n02t2l.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

MOSTRAR MÁS

Otros transistores... RU8590R, RUE002N02TL, RUE003N02TL, RUF015N02TL, RUF025N02TL, RUL035N02TR, RUM001L02, RUM002N02T2L, 75N75, RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, RUR020N02TL, RUR040N02FRA, RUR040N02TL, RUS100N02, PHB101NQ04T