All MOSFET. RUM002N05T2L Datasheet

 

RUM002N05T2L Datasheet and Replacement


   Type Designator: RUM002N05T2L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: VMT3
 

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RUM002N05T2L Datasheet (PDF)

 ..1. Size:170K  ruichips
 rum002n05t2l.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002

 5.1. Size:172K  rohm
 rum002n05.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002

 6.1. Size:214K  rohm
 rum002n02.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

 6.2. Size:213K  ruichips
 rum002n02t2l.pdf pdf_icon

RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

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Datasheet: RU8590R , RUE002N02TL , RUE003N02TL , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , IRF520 , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , RUR020N02TL , RUR040N02FRA , RUR040N02TL , RUS100N02 , PHB101NQ04T .

History: SMG2326N | NP90N04VDG | HPW080NE5SPA | KSK596 | OSG55R108FZF | AON6790 | WTM3401

Keywords - RUM002N05T2L MOSFET datasheet

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