All MOSFET. RUM002N05T2L Datasheet

 

RUM002N05T2L MOSFET. Datasheet pdf. Equivalent

Type Designator: RUM002N05T2L

SMD Transistor Code: RH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.15 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 0.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 6 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: VMT3

RUM002N05T2L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUM002N05T2L Datasheet (PDF)

1.1. rum002n05.pdf Size:172K _rohm

RUM002N05T2L
RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N05 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET VMT3 ?Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 ?1 RUM002N05 ? ?2 ? Abso

1.2. rum002n05t2l.pdf Size:170K _ruichips

RUM002N05T2L
RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N05  Structure  Dimensions (Unit : mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH  Application Switching  Packaging specifications  Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 ∗1 RUM002

 2.1. rum002n02.pdf Size:214K _rohm

RUM002N05T2L
RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packag

2.2. rum002n02t2l.pdf Size:213K _ruichips

RUM002N05T2L
RUM002N05T2L

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

Datasheet: RU8590R , RUE002N02TL , RUE003N02TL , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , IRFP150N , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , RUR020N02TL , RUR040N02FRA , RUR040N02TL , RUS100N02 , PHB101NQ04T .

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