RUM003N02T2L Datasheet. Equivalente

 ..1. Size:98K  ruichips
 rum003n02t2l.pdf

RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit mm) Structure Silicon N-channel VMT3 MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source) 1) Low on-resistance. (3)Collector(OUT)(Drain) Abbreviated symbol QT 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.

 5.1. Size:100K  rohm
 rum003n02.pdf

RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit mm) Structure Silicon N-channel VMT3 MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source) 1) Low on-resistance. (3)Collector(OUT)(Drain) Abbreviated symbol QT 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.

 9.1. Size:172K  rohm
 rum002n05.pdf

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 1 RUM002

 9.2. Size:2209K  rohm
 rum001l02.pdf

RUM001L02 Datasheet Nch 20V 100mA Small Signal MOSFET lOutline l SOT-723 VDSS 20V SC-105AA RDS(on)(Max.) 3.5 VMT3 ID 100mA PD 150mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPackagi

 9.3. Size:214K  rohm
 rum002n02.pdf

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

 9.4. Size:170K  ruichips
 rum002n05t2l.pdf

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET VMT3 Features 1) High speed switing. 2) Small package(VMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code T2L Basic ordering unit (pieces) 8000 1 RUM002

 9.5. Size:584K  ruichips
 rum001l02.pdf

RUM001L02 Nch 20V 100mA Small Signal MOSFET Data Sheet lOutline VDSS 20V VMT3 (3) RDS(on) (Max.) 3.5W ID 100mA (1) PD 150mW (2) lFeatures lInner circuit 1) Low voltage drive(1.2V) makes this (1) Gate device ideal for partable equipment. (2) Source 2) Drive circuits can be simple. (3) Drain 3) Built-in G-S Protection Diode. *1 BODY DIODE *2 ESD PROTECTION DIODE l

 9.6. Size:213K  ruichips
 rum002n02t2l.pdf

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit mm) Silicon N-channel VMT3 MOSFET Applications Switching (1)Gate Features (2)Souce (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac