RUM003N02T2L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RUM003N02T2L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: VMT3

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RUM003N02T2L Datasheet (PDF)

..1. Size:98K ruichips
rum003n02t2l.pdf

RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel VMT3MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source)1) Low on-resistance. (3)Collector(OUT)(Drain)Abbreviated symbol : QT2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.

5.1. Size:100K rohm
rum003n02.pdf

9.1. Size:172K rohm
rum002n05.pdf

1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002

9.2. Size:2209K rohm
rum001l02.pdf

RUM001L02DatasheetNch 20V 100mA Small Signal MOSFETlOutlinel SOT-723VDSS20V SC-105AARDS(on)(Max.)3.5 VMT3ID100mAPD150mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPackagi

9.3. Size:214K rohm
rum002n02.pdf

1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac

9.4. Size:170K ruichips
rum002n05t2l.pdf

9.5. Size:584K ruichips
rum001l02.pdf

RUM001L02 Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VVMT3(3) RDS(on) (Max.)3.5WID100mA (1) PD150mW (2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE l

9.6. Size:213K ruichips
rum002n02t2l.pdf

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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