RUM003N02T2L MOSFET. Datasheet pdf. Equivalent
Type Designator: RUM003N02T2L
Marking Code: QT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 10 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: VMT3
RUM003N02T2L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUM003N02T2L Datasheet (PDF)
rum003n02t2l.pdf
RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel VMT3MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source)1) Low on-resistance. (3)Collector(OUT)(Drain)Abbreviated symbol : QT2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.
rum003n02.pdf
RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel VMT3MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source)1) Low on-resistance. (3)Collector(OUT)(Drain)Abbreviated symbol : QT2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.
rum002n05.pdf
1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002
rum001l02.pdf
RUM001L02DatasheetNch 20V 100mA Small Signal MOSFETlOutlinel SOT-723VDSS20V SC-105AARDS(on)(Max.)3.5 VMT3ID100mAPD150mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPackagi
rum002n02.pdf
1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac
rum002n05t2l.pdf
1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002
rum001l02.pdf
RUM001L02 Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VVMT3(3) RDS(on) (Max.)3.5WID100mA (1) PD150mW (2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE l
rum002n02t2l.pdf
1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STW45NM60
History: STW45NM60
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