RUM003N02T2L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RUM003N02T2L
Маркировка: QT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 10 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: VMT3
Аналог (замена) для RUM003N02T2L
RUM003N02T2L Datasheet (PDF)
rum003n02t2l.pdf
RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel VMT3MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source)1) Low on-resistance. (3)Collector(OUT)(Drain)Abbreviated symbol : QT2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.
rum003n02.pdf
RUM003N02 Transistor 1.8V Drive Nch MOSFET RUM003N02 Dimensions (Unit : mm) Structure Silicon N-channel VMT3MOSFET Applications Switching (1)Base(IN)(Gate) Features (2)Emitter(GND)(Source)1) Low on-resistance. (3)Collector(OUT)(Drain)Abbreviated symbol : QT2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment.
rum002n05.pdf
1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002
rum001l02.pdf
RUM001L02DatasheetNch 20V 100mA Small Signal MOSFETlOutlinel SOT-723VDSS20V SC-105AARDS(on)(Max.)3.5 VMT3ID100mAPD150mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPackagi
rum002n02.pdf
1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac
rum002n05t2l.pdf
1.2V Drive Nch MOSFET RUM002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETVMT3Features1) High speed switing.2) Small package(VMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode T2LBasic ordering unit (pieces) 80001RUM002
rum001l02.pdf
RUM001L02 Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VVMT3(3) RDS(on) (Max.)3.5WID100mA (1) PD150mW (2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE l
rum002n02t2l.pdf
1.2V Drive Nch MOSFET RUM002N02 Structure Dimensions (Unit : mm) Silicon N-channel VMT3MOSFET Applications Switching (1)Gate Features (2)Souce(3)DrainAbbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Pac
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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