PHB101NQ04T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB101NQ04T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 157 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 51 nS

Cossⓘ - Capacitancia de salida: 485 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0152 Ohm

Encapsulados: D2PAK

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PHB101NQ04T datasheet

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PHB101NQ04T

PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea

 ..2. Size:94K  philips
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PHB101NQ04T

PHP/PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 01 12 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-

 9.1. Size:331K  philips
 phb100n03lt-01.pdf pdf_icon

PHB101NQ04T

PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHB100N03LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated

 9.2. Size:94K  philips
 phb108nq03lt phd108nq03lt phu108nq03lt.pdf pdf_icon

PHB101NQ04T

PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge 1.3 Applicati

MOSTRAR MÁS

Otros transistores... RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, RUR020N02TL, RUR040N02FRA, RUR040N02TL, RUS100N02, IRF830, PHB108NQ03LT, PHB110NQ06LT, PHB110NQ08LT, PHB112N06T, PHB119NQ06T, PHB11N06LT, PHB129NQ04LT, PHB143NQ04T