All MOSFET. PHB101NQ04T Datasheet

 

PHB101NQ04T Datasheet and Replacement


   Type Designator: PHB101NQ04T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 157 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 485 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0152 Ohm
   Package: D2PAK
 

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PHB101NQ04T Datasheet (PDF)

 ..1. Size:178K  philips
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PHB101NQ04T

PHB101NQ04TN-channel TrenchMOS standard level FETRev. 02 10 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea

 ..2. Size:94K  philips
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PHB101NQ04T

PHP/PHB101NQ04TN-channel TrenchMOS standard level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-

 9.1. Size:331K  philips
phb100n03lt-01.pdf pdf_icon

PHB101NQ04T

PHB100N03LTN-channel enhancement mode field-effect transistorRev. 01 07 September 2000 Product specificationM3D1661. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHB100N03LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated

 9.2. Size:94K  philips
phb108nq03lt phd108nq03lt phu108nq03lt.pdf pdf_icon

PHB101NQ04T

PHB/PHD/PHU108NQ03LTN-channel TrenchMOS logic level FETRev. 03 18 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge1.3 Applicati

Datasheet: RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , RUR020N02TL , RUR040N02FRA , RUR040N02TL , RUS100N02 , IRF1405 , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T , PHB11N06LT , PHB129NQ04LT , PHB143NQ04T .

History: MTH6N60 | APT10035B2LL | STD30NF03L | XGP6510B | 2N7637-GA | SI2323DDS-T1-GE3 | UTT150N03

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