PHB101NQ04T PDF Specs and Replacement
Type Designator: PHB101NQ04T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 157 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 485 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0152 Ohm
Package: D2PAK
PHB101NQ04T substitution
PHB101NQ04T PDF Specs
phb101nq04t.pdf
PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea... See More ⇒
php101nq04t phb101nq04t.pdf
PHP/PHB101NQ04T N-channel TrenchMOS standard level FET Rev. 01 12 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-... See More ⇒
phb100n03lt-01.pdf
PHB100N03LT N-channel enhancement mode field-effect transistor Rev. 01 07 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHB100N03LT in SOT404 (D2-PAK). 2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated ... See More ⇒
phb108nq03lt phd108nq03lt phu108nq03lt.pdf
PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge 1.3 Applicati... See More ⇒
Detailed specifications: RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , RUR020N02TL , RUR040N02FRA , RUR040N02TL , RUS100N02 , IRF830 , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T , PHB11N06LT , PHB129NQ04LT , PHB143NQ04T .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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