PHB101NQ04T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB101NQ04T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 157
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 485
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0152
Ohm
Package:
D2PAK
PHB101NQ04T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB101NQ04T
Datasheet (PDF)
..1. Size:178K philips
phb101nq04t.pdf 
PHB101NQ04TN-channel TrenchMOS standard level FETRev. 02 10 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea
..2. Size:94K philips
php101nq04t phb101nq04t.pdf
PHP/PHB101NQ04TN-channel TrenchMOS standard level FETRev. 01 12 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-
9.1. Size:331K philips
phb100n03lt-01.pdf
PHB100N03LTN-channel enhancement mode field-effect transistorRev. 01 07 September 2000 Product specificationM3D1661. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHB100N03LT in SOT404 (D2-PAK).2. Features TrenchMOS technology Low on-state resistance Avalanche ruggedness rated
9.2. Size:94K philips
phb108nq03lt phd108nq03lt phu108nq03lt.pdf
PHB/PHD/PHU108NQ03LTN-channel TrenchMOS logic level FETRev. 03 18 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge1.3 Applicati
9.3. Size:253K philips
phb108nq03lt phd108nq03lt php108nq03lt.pdf
PHP/PHB/PHD108NQ03LTTrenchMOS logic level FETRev. 02 11 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHP108NQ03LT in SOT78 (TO-220AB)PHB108NQ03LT in SOT404 (D2-PAK)PHD108NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatibl
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