PHB110NQ08LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PHB110NQ08LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 185 nS
   Cossⓘ - Capacitancia de salida: 905 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
   Paquete / Cubierta: D2PAK

Búsqueda de reemplazo de MOSFET PHB110NQ08LT

PHB110NQ08LT Datasheet (PDF)

..1. Size:89K philips
phb110nq08lt php110nq08lt.pdf

PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

4.1. Size:89K philips
php110nq08t phb110nq08t.pdf

PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D

4.2. Size:674K nxp
phb110nq08t.pdf

PHB110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

5.1. Size:209K philips
phb110nq06lt.pdf

PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

5.2. Size:94K philips
php110nq06lt phb110nq06lt.pdf

PHP/PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 01 04 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-D

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CEM9435

Liste

Recientemente añadidas las descripciónes de los transistores: