All MOSFET. PHB110NQ08LT Datasheet

 

PHB110NQ08LT Datasheet and Replacement


   Type Designator: PHB110NQ08LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 185 nS
   Cossⓘ - Output Capacitance: 905 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: D2PAK
      - MOSFET Cross-Reference Search

 

PHB110NQ08LT Datasheet (PDF)

 ..1. Size:89K  philips
phb110nq08lt php110nq08lt.pdf pdf_icon

PHB110NQ08LT

PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

 4.1. Size:89K  philips
php110nq08t phb110nq08t.pdf pdf_icon

PHB110NQ08LT

PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D

 4.2. Size:674K  nxp
phb110nq08t.pdf pdf_icon

PHB110NQ08LT

PHB110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 5.1. Size:209K  philips
phb110nq06lt.pdf pdf_icon

PHB110NQ08LT

PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MCT04N15 | AP65SL600DH | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

Keywords - PHB110NQ08LT MOSFET datasheet

 PHB110NQ08LT cross reference
 PHB110NQ08LT equivalent finder
 PHB110NQ08LT lookup
 PHB110NQ08LT substitution
 PHB110NQ08LT replacement

 

 
Back to Top

 


 
.