PHB110NQ08LT Datasheet. Specs and Replacement

Type Designator: PHB110NQ08LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 185 nS

Cossⓘ - Output Capacitance: 905 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: D2PAK

PHB110NQ08LT substitution

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PHB110NQ08LT datasheet

 ..1. Size:89K  philips
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PHB110NQ08LT

PHP/PHB110NQ08LT N-channel TrenchMOS logic level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies ... See More ⇒

 4.1. Size:89K  philips
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PHB110NQ08LT

PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D... See More ⇒

 4.2. Size:674K  nxp
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PHB110NQ08LT

PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 02 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F... See More ⇒

 5.1. Size:209K  philips
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PHB110NQ08LT

PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features ... See More ⇒

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Detailed specifications: RUQ050N02TR, RUR020N02TL, RUR040N02FRA, RUR040N02TL, RUS100N02, PHB101NQ04T, PHB108NQ03LT, PHB110NQ06LT, IRFB7545, PHB112N06T, PHB119NQ06T, PHB11N06LT, PHB129NQ04LT, PHB143NQ04T, PHB145NQ06T, PHB146NQ06LT, PHB152NQ03LTA

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.