All MOSFET. PHB110NQ08LT Datasheet

 

PHB110NQ08LT Datasheet and Replacement


   Type Designator: PHB110NQ08LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 185 nS
   Cossⓘ - Output Capacitance: 905 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: D2PAK
 

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PHB110NQ08LT Datasheet (PDF)

 ..1. Size:89K  philips
phb110nq08lt php110nq08lt.pdf pdf_icon

PHB110NQ08LT

PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

 4.1. Size:89K  philips
php110nq08t phb110nq08t.pdf pdf_icon

PHB110NQ08LT

PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D

 4.2. Size:674K  nxp
phb110nq08t.pdf pdf_icon

PHB110NQ08LT

PHB110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 5.1. Size:209K  philips
phb110nq06lt.pdf pdf_icon

PHB110NQ08LT

PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

Datasheet: RUQ050N02TR , RUR020N02TL , RUR040N02FRA , RUR040N02TL , RUS100N02 , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , 8N60 , PHB112N06T , PHB119NQ06T , PHB11N06LT , PHB129NQ04LT , PHB143NQ04T , PHB145NQ06T , PHB146NQ06LT , PHB152NQ03LTA .

History: ME2301DN-G | IRF6722M | STT3434N | KHB5D0N50P | APT10045LLLG | SHD231009 | IXTQ102N15T

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