PHB11N06LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB11N03LT, PHD11N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPTIONN-chann

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI

Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 Ag Low thermal resistanceRDS(ON) 0.55 sGENERAL DESCRIPTIONN-channel,