PHB11N06LT
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHB11N06LT
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 10.3
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 64
nS
Cossⓘ -
Output Capacitance: 55
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
D2PAK
PHB11N06LT
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHB11N06LT
Datasheet (PDF)
..1. Size:113K philips
phb11n06lt.pdf 
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT
..2. Size:114K philips
phb11n06lt phd11n06lt php11n06lt 3.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT
7.1. Size:107K philips
phb11n03lt phd11n03lt 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB11N03LT, PHD11N03LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPTIONN-chann
8.1. Size:35K philips
php11n50e phb11n50e phw11n50e.pdf
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI
8.2. Size:102K philips
phb11n50e phw11n50e 1.pdf
Philips Semiconductors Product specification PowerMOS transistors PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.9 Ag Low thermal resistanceRDS(ON) 0.55 sGENERAL DESCRIPTIONN-channel,
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