PHB11N06LT PDF and Equivalents Search

 

PHB11N06LT PDF Specs and Replacement


   Type Designator: PHB11N06LT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 10.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: D2PAK
 

 PHB11N06LT substitution

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PHB11N06LT PDF Specs

 ..1. Size:113K  philips
phb11n06lt.pdf pdf_icon

PHB11N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPT... See More ⇒

 ..2. Size:114K  philips
phb11n06lt phd11n06lt php11n06lt 3.pdf pdf_icon

PHB11N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPT... See More ⇒

 7.1. Size:107K  philips
phb11n03lt phd11n03lt 1.pdf pdf_icon

PHB11N06LT

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB11N03LT, PHD11N03LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 30 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) 150 m (VGS = 5 V) g RDS(ON) 130 m (VGS = 10 V) s GENERAL DESCRIPTION N-chann... See More ⇒

 8.1. Size:35K  philips
php11n50e phb11n50e phw11n50e.pdf pdf_icon

PHB11N06LT

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 A g Low thermal resistance RDS(ON) 0.6 s GENERAL DESCRIPTI... See More ⇒

Detailed specifications: RUR040N02TL , RUS100N02 , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T , EMB04N03H , PHB129NQ04LT , PHB143NQ04T , PHB145NQ06T , PHB146NQ06LT , PHB152NQ03LTA , PHB153NQ08LT , PHB160NQ08T , PHB174NQ04LT .

Keywords - PHB11N06LT MOSFET specs

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