PHB160NQ08T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHB160NQ08T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 56 nS
Cossⓘ - Capacitancia de salida: 845 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm
Paquete / Cubierta: D2PAK
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PHB160NQ08T Datasheet (PDF)
php160nq08t phb160nq08t.pdf
PHP/PHB160NQ08TN-channel TrenchMOS standard level FETRev. 01 28 January 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptable power supplies
phb160nq08t.pdf
PHB160NQ08TN-channel TrenchMOS standard level FETRev. 02 10 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea
phb160n03t-01.pdf
PHB160N03TN-channel enhancement mode field-effect transistorRev. 01 13 September 2000 Product specificationM3D1661. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHB160N03T in SOT404 (D2-PAK).2. Features TrenchMOS technology Very low on-state resistance.3. Applications DC to
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