PHB160NQ08T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB160NQ08T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 845 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm

Encapsulados: D2PAK

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PHB160NQ08T datasheet

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 php160nq08t phb160nq08t.pdf pdf_icon

PHB160NQ08T

PHP/PHB160NQ08T N-channel TrenchMOS standard level FET Rev. 01 28 January 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptable power supplies

 ..2. Size:172K  philips
 phb160nq08t.pdf pdf_icon

PHB160NQ08T

PHB160NQ08T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea

 7.1. Size:271K  philips
 phb160n03t-01.pdf pdf_icon

PHB160NQ08T

PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHB160N03T in SOT404 (D2-PAK). 2. Features TrenchMOS technology Very low on-state resistance. 3. Applications DC to

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