PHB160NQ08T Datasheet. Specs and Replacement
Type Designator: PHB160NQ08T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 845 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: D2PAK
PHB160NQ08T substitution
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PHB160NQ08T datasheet
php160nq08t phb160nq08t.pdf
PHP/PHB160NQ08T N-channel TrenchMOS standard level FET Rev. 01 28 January 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptable power supplies ... See More ⇒
phb160nq08t.pdf
PHB160NQ08T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Fea... See More ⇒
phb160n03t-01.pdf
PHB160N03T N-channel enhancement mode field-effect transistor Rev. 01 13 September 2000 Product specification M3D166 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability PHB160N03T in SOT404 (D2-PAK). 2. Features TrenchMOS technology Very low on-state resistance. 3. Applications DC to ... See More ⇒
Detailed specifications: PHB119NQ06T, PHB11N06LT, PHB129NQ04LT, PHB143NQ04T, PHB145NQ06T, PHB146NQ06LT, PHB152NQ03LTA, PHB153NQ08LT, AO4468, PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, PHB4ND40E
Keywords - PHB160NQ08T MOSFET specs
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History: 2SK3513-01SJ
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