PHB160NQ08T Datasheet and Replacement
Type Designator: PHB160NQ08T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 845 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: D2PAK
PHB160NQ08T substitution
PHB160NQ08T Datasheet (PDF)
php160nq08t phb160nq08t.pdf

PHP/PHB160NQ08TN-channel TrenchMOS standard level FETRev. 01 28 January 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptable power supplies
phb160nq08t.pdf

PHB160NQ08TN-channel TrenchMOS standard level FETRev. 02 10 March 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fea
phb160n03t-01.pdf

PHB160N03TN-channel enhancement mode field-effect transistorRev. 01 13 September 2000 Product specificationM3D1661. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHB160N03T in SOT404 (D2-PAK).2. Features TrenchMOS technology Very low on-state resistance.3. Applications DC to
Datasheet: PHB119NQ06T , PHB11N06LT , PHB129NQ04LT , PHB143NQ04T , PHB145NQ06T , PHB146NQ06LT , PHB152NQ03LTA , PHB153NQ08LT , IRFP064N , PHB174NQ04LT , PHB176NQ04T , PHB193NQ06T , PHB222NQ04LT , PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E .
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