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PHP45NQ15T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PHP45NQ15T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45.1 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 290 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: TO-220AB
 
   - Selección ⓘ de transistores por parámetros

 

PHP45NQ15T Datasheet (PDF)

 ..1. Size:85K  philips
 php45nq15t.pdf pdf_icon

PHP45NQ15T

PHP/PHB45NQ15TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC

 6.1. Size:110K  philips
 phb45nq10t php45nq10t phw45nq10t 1.pdf pdf_icon

PHP45NQ15T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor

 6.2. Size:355K  philips
 php45nq11t.pdf pdf_icon

PHP45NQ15T

PHP45NQ11TN-channel TrenchMOS standard level FETRev. 02 19 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 6.3. Size:859K  nxp
 php45nq10t.pdf pdf_icon

PHP45NQ15T

PHP45NQ10TN-channel TrenchMOS standard level FETRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur

MOSTRAR MÁS

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History: CM5N50F

 

 
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