PHP45NQ15T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHP45NQ15T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 230
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 45.1
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.042
Ohm
Package:
TO-220AB
PHP45NQ15T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHP45NQ15T
Datasheet (PDF)
..1. Size:85K philips
php45nq15t.pdf
PHP/PHB45NQ15TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC
6.1. Size:110K philips
phb45nq10t php45nq10t phw45nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor
6.2. Size:355K philips
php45nq11t.pdf
PHP45NQ11TN-channel TrenchMOS standard level FETRev. 02 19 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F
6.3. Size:859K nxp
php45nq10t.pdf
PHP45NQ10TN-channel TrenchMOS standard level FETRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur
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