All MOSFET. PHP45NQ15T Datasheet

 

PHP45NQ15T Datasheet and Replacement


   Type Designator: PHP45NQ15T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45.1 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: TO-220AB
 

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PHP45NQ15T Datasheet (PDF)

 ..1. Size:85K  philips
php45nq15t.pdf pdf_icon

PHP45NQ15T

PHP/PHB45NQ15TN-channel TrenchMOS standard level FETRev. 01 8 November 2004 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode field effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Low on-state resistance Fast switching Low thermal resistance Low gate charge.1.3 Applications DC-to-DC

 6.1. Size:110K  philips
phb45nq10t php45nq10t phw45nq10t 1.pdf pdf_icon

PHP45NQ15T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHB45NQ10T, PHP45NQ10T PHW45NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor

 6.2. Size:355K  philips
php45nq11t.pdf pdf_icon

PHP45NQ15T

PHP45NQ11TN-channel TrenchMOS standard level FETRev. 02 19 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

 6.3. Size:859K  nxp
php45nq10t.pdf pdf_icon

PHP45NQ15T

PHP45NQ10TN-channel TrenchMOS standard level FETRev. 02 8 July 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Featur

Datasheet: PHP21N06T , PHP222NQ04LT , PHP225NQ04T , PHP24N03LT , PHP32N06LT , PHP34NQ11T , PHP36N03LT , PHP45N03LT , IRFZ24N , PHP52N06T , PHP54N06T , PHP66NQ03LT , PHP71NQ03LT , PHP73N06T , PHP75NQ08T , PHP78NQ03LT , PHP83N03LT .

History: HGD093N12SL | IPB120N08S4-03 | SQM90142E | CS65N20-30 | C3M0065100K | DMG8880LSS | IXFV110N10P

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