SFH9250L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFH9250L  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 204 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 19.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 150 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm

Encapsulados: TO3P

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SFH9250L datasheet

 ..1. Size:545K  fairchild semi
 sfh9250l.pdf pdf_icon

SFH9250L

Advanced Power MOSFET SFH9250L FEATURES BVDSS = -200 V Logic-Level Gate Drive RDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -19.5 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10uA (Max.) @ VDS=-200V Lower RDS(ON) 0.175 (Typ.) 1 2 3 1.Gate 2. D

 9.1. Size:207K  fairchild semi
 sfh9240.pdf pdf_icon

SFH9250L

SFH9240 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A(Max.) @ VDS = -200V Lower RDS(ON) 0.344 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

 9.2. Size:920K  samsung
 sfh9244.pdf pdf_icon

SFH9250L

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 0.549 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

 9.3. Size:911K  samsung
 sfh9240.pdf pdf_icon

SFH9250L

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 0.344 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

MOSTRAR MÁS

Otros transistores... SFF9240Z, SFF9250L, SFFC40-28, SFFC50, SFFC50M, SFFC50Z, SFFX054M, SFFX054Z, 5N60, SFI9540, SFL024, SFL044J, SFL3200, SFM9014TF, SFM9110TF, SFP12N65, SFP13N50