SFH9250L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SFH9250L Datasheet (PDF)

..1. Size:545K fairchild semi
sfh9250l.pdf pdf_icon

Advanced Power MOSFETSFH9250LFEATURESBVDSS = -200 V Logic-Level Gate DriveRDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -19.5 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10uA (Max.) @ VDS=-200V Lower RDS(ON) : 0.175 (Typ.)1231.Gate 2. D

9.1. Size:207K fairchild semi
sfh9240.pdf pdf_icon

SFH9240Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A(Max.) @ VDS = -200V Lower RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

9.2. Size:920K samsung
sfh9244.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

9.3. Size:911K samsung
sfh9240.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

Otros transistores... SFF9240Z , SFF9250L , SFFC40-28 , SFFC50 , SFFC50M , SFFC50Z , SFFX054M , SFFX054Z , 13N50 , SFI9540 , SFL024 , SFL044J , SFL3200 , SFM9014TF , SFM9110TF , SFP12N65 , SFP13N50 .