SFH9250L Datasheet. Specs and Replacement

Type Designator: SFH9250L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 204 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO3P

SFH9250L substitution

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SFH9250L datasheet

 ..1. Size:545K  fairchild semi
 sfh9250l.pdf pdf_icon

SFH9250L

Advanced Power MOSFET SFH9250L FEATURES BVDSS = -200 V Logic-Level Gate Drive RDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -19.5 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10uA (Max.) @ VDS=-200V Lower RDS(ON) 0.175 (Typ.) 1 2 3 1.Gate 2. D... See More ⇒

 9.1. Size:207K  fairchild semi
 sfh9240.pdf pdf_icon

SFH9250L

SFH9240 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A(Max.) @ VDS = -200V Lower RDS(ON) 0.344 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒

 9.2. Size:920K  samsung
 sfh9244.pdf pdf_icon

SFH9250L

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 0.549 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic... See More ⇒

 9.3. Size:911K  samsung
 sfh9240.pdf pdf_icon

SFH9250L

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 0.344 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

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Detailed specifications: SFF9240Z, SFF9250L, SFFC40-28, SFFC50, SFFC50M, SFFC50Z, SFFX054M, SFFX054Z, 5N60, SFI9540, SFL024, SFL044J, SFL3200, SFM9014TF, SFM9110TF, SFP12N65, SFP13N50

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.